霍尔效应传感器(磁场测量传感器)
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霍尔效应传感器可为科学研究、医疗健康、航空航天和工业应用提供高性能的模拟磁场测量。
Figure 1. sensor on test assembly
产品特点:
• 超高分辨率
• 超低噪音性能
• 可在极低温条件下使用
• 大动态范围
• 高线性
• 超低功耗运行
简述:
利用石墨烯固有的低噪声特性,无需信号调节即可提供出色的场分辨率。石墨烯的二维性质 很大程度地降低了平面霍尔效应,并且石墨烯的稳定性和电子 迁移率提供了 超强的温度和磁场工作范围。
应用包括:
• 精密磁场测量
• 场梯度和边缘场的精确映射
• 高精度位置,旋转和速度感应
• 低温下的超低功率场测量
优点:
可满足各种应用需求。可以利用的优点包括:
• 可以在 < 1.8 K - 353 K的极端温度下运行
• 在大磁场范围(> 9 T)内ppb磁场变化的分辨率
• 低至 10 nA的工作电流,节省了功率,仅产生5 pW的散热
• 平面霍尔效应可忽略不计,有助于精确地确定仪器的摆放位置场方向
需要特定要求,请联系我们info<info@spl-tech.cn>
性能特点:
Parameter
Symbol
Value (typical)
Unit
Notes
Maximum operating temperature range
T
1.8 to 353
K
Performance guaranteed within this range. Operation <1.8 K is possible
Measurable field range
B
>+/- 9
T
See Fig.2. At 1.8K, 0-9 T is possible with reduced linearity
Open Circuit Sensitivity
S
1100
V/AT
@ room temperature. see Fig 3 for change with temperature
Open Circuit Hall Voltage
VH
110
mV
I=IN and B=1 T, increases with reducing temperature
Spectral Noise Density
SDT
7
µ𝑇⁄√𝐻𝑧
10 Hz, 2 VRMS (equivalent to I=IN)
0.7
1 kHz, 2 VRMS (equivalent to I=IN)
0.3
10 kHz, 2 VRMS (equivalent to I=IN)
0.07
100 kHz, 2 VRMS (equivalent to I=IN)
Resolution, based on SDT on a 1 T field
RSND
7
ppm
10 Hz, 2 VRMS (equivalent to I=IN)
0.7
1 kHz, 2 VRMS (equivalent to I=IN)
0.3
10 kHz, 2 VRMS (equivalent to I=IN)
0.07
100 kHz, 2 VRMS (equivalent to I=IN)
RMS noise
T2
40
T
0.1 – 10 Hz, 2 VRMS (equivalent to I=IN)
28
10 – 100 kHz, 2 VRMS (equivalent to I=IN)
Linearity of Hall Voltage
% of full scale
FL
<0.5
%
-1 to 1 T. See Fig 2 for full 0-9 T range
Corrected Linearity
<0.01
%
-1 to 1 T, after 3rd order correction
Planar Hall Effect
HPL
<10
µT
At I=IN , 1 T
Nominal Supply Current
IN
0.1
mA
Can be operated down to I=10 nA
Maximum Supply Current
Imax
1
mA
Supply Side Internal Resistance
RIN
22
kΩ
B=0 T
Hall Side Internal Resistance
ROUT
22
kΩ
B=0 T
Offset Voltage
VR0
8
mV
Typical offset voltage at I=IN and B=0 T
0.6
mV
Min offset voltage at I=IN and B=0 T
34
mV
Max offset voltage at I=IN and B=0 T
Temperature Coefficient of Sensitivity
TCS
-4.7
V/AT/K
@ room temperature, IN
高场和低温性能
Figure 2. Hall Voltage output at 295 K, from 0 to 9 T
Figure 3. Sensitivity as a function of temperature from 1.8 K to 300 K. Measured at 1T.
封装信息
有效面积:1.3 x 1.3 mm 位于封装的中心封装类型: 20-pin LCC, 陶瓷,无镍, 表面贴焊。
Pin
Notes
VIN+
1 or 11
Input voltage can be supplied with either
polarity
VIN-
11 or 1
VH+
6 or 16
Hall voltage polarity will
depend on VIN polarity and field polarity
VH-
16 or 6
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